دیتاشیت BS170-D26Z

BS170

مشخصات دیتاشیت

نام دیتاشیت BS170
حجم فایل 63.298 کیلوبایت
نوع فایل pdf
تعداد صفحات 4

دانلود دیتاشیت BS170

BS170 Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi BS170-D26Z
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 830mW
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 40pF@10V
  • Continuous Drain Current (Id): 500mA
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@10V,200mA
  • Package: TO-92-3
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Base Part Number: BS170
  • detail: N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3

دیتاشیت محصولات مشابه