BS170-D26Z 数据手册
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BS170 4 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi BS170-D26Z
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 830mW
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 40pF@10V
- Continuous Drain Current (Id): 500mA
- Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@10V,200mA
- Package: TO-92-3
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- FET Feature: -
- Power Dissipation (Max): 830mW (Ta)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number: BS170
- detail: N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3